Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYK140N120A4

Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages
Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages
Datasheet
Datasheet Summary
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The IXYK140N120A4 is a 1200V XPT Trench IGBT designed for switching applications up to 5kHz, featuring low conduction losses and a positive thermal coefficient of Vce(sat). It is packaged in a TO-264 case with a weight of 10g and a maximum junction temperature of 175°C. The device has a continuous collector current rating of 140A at 110°C, a saturation voltage of 1.70V max at 25°C, and thermal resistance from junction to case of 0.10°C/W. It meets international standard package requirements and is qualified for use in power inverters, UPS, motor drives, SMPS, PFC circuits, battery chargers, welding machines, and lamp ballasts.

Datasheet Summary
Powered by GS/AI

The IXYK140N120A4 is a 1200V XPT Trench IGBT designed for switching applications up to 5kHz, featuring low conduction losses and a positive thermal coefficient of Vce(sat). It is packaged in a TO-264 case with a weight of 10g and a maximum junction temperature of 175°C. The device has a continuous collector current rating of 140A at 110°C, a saturation voltage of 1.70V max at 25°C, and thermal resistance from junction to case of 0.10°C/W. It meets international standard package requirements and is qualified for use in power inverters, UPS, motor drives, SMPS, PFC circuits, battery chargers, welding machines, and lamp ballasts.

Suppliers

Company
Product
Description
Supplier Links
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYK140N120A4 - Littelfuse, Inc.
Rosemont, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXYK140N120A4
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYK140N120A4
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages

Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYK140N120A4
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 1200 volts
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