Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH82N120C3

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Features: Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package Advantages: Hard-switching capability High power density Low gate drive requirements Applications: Battery chargers E-Bikes Lamp ballasts Power inverters Power Factor Correction (PFC) circuits Switched-mode power supplies Uninterruptible Power Supplies (UPS) Welding machines

The XPTâ„¢ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat). Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage. Short circuit capability for 10usec. Positive on-state voltage temperature coefficient. Optional co-packed Sonic-FRDâ„¢ or HiPerFREDâ„¢ diodes. International standard and proprietary high voltage packages
Maximum Continuous Collector Current = 200 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 1.25 kW
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 50kHz
Transistor Configuration = Single

The XPTâ„¢ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat). Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage. Short circuit capability for 10usec. Positive on-state voltage temperature coefficient. Optional co-packed Sonic-FRDâ„¢ or HiPerFREDâ„¢ diodes. International standard and proprietary high voltage packages
Maximum Continuous Collector Current = 200 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 1.25 kW
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 50kHz
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

The XPTâ„¢ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat). Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage. Short circuit capability for 10usec. Positive on-state voltage temperature coefficient. Optional co-packed Sonic-FRDâ„¢ or HiPerFREDâ„¢ diodes. International standard and proprietary high voltage packages
Maximum Continuous Collector Current = 200 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 1.25 kW
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 50kHz
Transistor Configuration = Single