The IXXK200N65B4 is a 650V IGBT designed for 10-30 kHz switching applications in power inverters, UPS, motor drives, and PFC circuits. It is packaged in a TO-264 case with a weight of 10 g, featuring a collector tab for thermal performance. The device supports a continuous collector current of 200 A at 110°C and a peak pulse current of 1200 A for 1 ms. Its collector-emitter saturation voltage is 1.70 V at 160 A and 15 V gate drive, with a thermal resistance from junction to case of 0.092 °C/W. The IGBT exhibits a square RBSOA, short-circuit capability for 10 μs, and a junction temperature range from -55°C to 175°C. It meets RoHS standards and is optimized for low gate drive requirements and high power density.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXK200N65B4 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
