Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXN200N60B3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXXN200N60B3 is a 600V IGBT designed for 10-30kHz switching applications in power inverters, motor drives, UPS, and PFC circuits. It is packaged in an SOT-227B miniBLOC case, weighing 30 g, with an aluminum nitride isolation base. The device has a continuous collector current rating of 160 A at 110°C and a peak collector current of 1000 A for 1 ms. Its collector-emitter saturation voltage is 1.70 V at 100 A and 15 V gate drive, with a typical switching duration of 110 ns. The IGBT is avalanche rated, features a square RBSOA, and has a short-circuit capability of 10 µs. It meets isolation voltage ratings of 2500 V~ and 3000 V~ for 1 second. Thermal resistance from junction to case is 0.16 °C/W. The operating junction temperature range is -55 to 175 °C. The device complies with RoHS standards.

Datasheet Summary
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The IXXN200N60B3 is a 600V IGBT designed for 10-30kHz switching applications in power inverters, motor drives, UPS, and PFC circuits. It is packaged in an SOT-227B miniBLOC case, weighing 30 g, with an aluminum nitride isolation base. The device has a continuous collector current rating of 160 A at 110°C and a peak collector current of 1000 A for 1 ms. Its collector-emitter saturation voltage is 1.70 V at 100 A and 15 V gate drive, with a typical switching duration of 110 ns. The IGBT is avalanche rated, features a square RBSOA, and has a short-circuit capability of 10 µs. It meets isolation voltage ratings of 2500 V~ and 3000 V~ for 1 second. Thermal resistance from junction to case is 0.16 °C/W. The operating junction temperature range is -55 to 175 °C. The device complies with RoHS standards.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXXN200N60B3 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXXN200N60B3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXN200N60B3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXN200N60B3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 600 volts
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