Littelfuse, Inc. Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA100W1200TEH MIXA100W1200TEH

Description
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA100W1200TEH
Description
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA100W1200TEH
Datasheet
Datasheet Summary
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The MIXA100W1200TEH is a six-pack IGBT module with 1200 V collector-emitter voltage and 155 A collector current rating, designed for AC motor drives, solar inverters, and uninterruptible power supplies. It features an "E3-Pack" standard outline with a soldering-pin PCB mount and an insulated copper base plate. Each IGBT has a V_CE(sat) of 1.8 V at 25°C and 100 A, and leverages XPT technology for short-circuit immunity up to 10 µs, low gate charge, and low EMI. Integrated SONIC™ diodes offer reverse recovery charge of 12.5 µC and a forward voltage of 1.95 V at 25°C. A 5.0 kΩ NTC thermistor for temperature sensing is included. Thermal resistance junction-to-case is 0.25 K/W per IGBT and 0.4 K/W per diode. The module meets a 3000 V~ isolation voltage and operates from -40°C to 125°C. Weight is 300 g.

Datasheet Summary
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The MIXA100W1200TEH is a six-pack IGBT module with 1200 V collector-emitter voltage and 155 A collector current rating, designed for AC motor drives, solar inverters, and uninterruptible power supplies. It features an "E3-Pack" standard outline with a soldering-pin PCB mount and an insulated copper base plate. Each IGBT has a V_CE(sat) of 1.8 V at 25°C and 100 A, and leverages XPT technology for short-circuit immunity up to 10 µs, low gate charge, and low EMI. Integrated SONIC™ diodes offer reverse recovery charge of 12.5 µC and a forward voltage of 1.95 V at 25°C. A 5.0 kΩ NTC thermistor for temperature sensing is included. Thermal resistance junction-to-case is 0.25 K/W per IGBT and 0.4 K/W per diode. The module meets a 3000 V~ isolation voltage and operates from -40°C to 125°C. Weight is 300 g.

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Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA100W1200TEH - MIXA100W1200TEH - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA100W1200TEH
MIXA100W1200TEH
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA100W1200TEH MIXA100W1200TEH
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA100W1200TEH

Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA100W1200TEH

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number MIXA100W1200TEH
Product Name Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA100W1200TEH
VCES 1200 volts
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