The IXYN50N170CV1 is a 1700 V, 50 A XPT™ IGBT with an integrated fast recovery diode, packaged in an SOT-227B miniBLOC case weighing 30 g. It has a collector-emitter saturation voltage of 3.7 V at 50 A and 15 V gate drive, and a gate threshold voltage of 3.0 to 5.0 V. The junction temperature ranges from -55 °C to 175 °C, with thermal resistance junction-to-case of 0.17 °C/W and case-to-sink of 0.05 °C/W. It achieves 2500 V~ isolation for 1 minute and 3000 V~ for 1 second, and supports a mounting torque of 1.5 Nm. Switching times are 95 ns for turn-off and 20 ns for turn-on at 175 °C, with energy losses under inductive load. The diode has a reverse recovery time of 255 ns at 150 °C and 1200 V.
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYN50N170CV1 |
| Product Name | 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1700 volts |
