Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYN100N120C3H1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYN100N120C3H1 - Littelfuse, Inc.
    Littelfuse, Inc.
  • IGBTs - 8047619 - RS Components, Ltd.
    RS Components, Ltd.
  • IGBTs - 1684762 - RS Components, Ltd.
    RS Components, Ltd.
  • Igbt, N-Ch, 1.2Kv, 134A, Sot-227B; Continuous Collector Current Ixys Semiconductor - 02AC9854 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYN100N120C3H1 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYN100N120C3H1
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYN100N120C3H1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 134A 1200V IGBT Transistor
279-IXYN100N120C3H1
N-Channel 134A 1200V IGBT Transistor 279-IXYN100N120C3H1
Insulated Gate Bipolar Transistor, 134A I(C), 1200V V(BR)CES, N-Channel, MINIBLOC-4 Product overview: IXYN100N120C3H1 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 134A, 1200V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 134A, 1200V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXYN100N120C3H1 can be used for catalog matching and distributor lookup.

Insulated Gate Bipolar Transistor, 134A I(C), 1200V V(BR)CES, N-Channel, MINIBLOC-4 Product overview: IXYN100N120C3H1 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 134A, 1200V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 134A, 1200V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXYN100N120C3H1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - 8047619 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
8047619
IGBTs 8047619
IGBT 1200V 134A XPT GenX3 Diode SOT227B

IGBT 1200V 134A XPT GenX3 Diode SOT227B

Supplier's Site
IGBTs - 1684762 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1684762
IGBTs 1684762
IGBT 1200V 134A XPT GenX3 Diode SOT227B

IGBT 1200V 134A XPT GenX3 Diode SOT227B

Supplier's Site
Igbt, N-Ch, 1.2Kv, 134A, Sot-227B; Continuous Collector Current Ixys Semiconductor - 02AC9854 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, N-Ch, 1.2Kv, 134A, Sot-227B; Continuous Collector Current Ixys Semiconductor
02AC9854
Igbt, N-Ch, 1.2Kv, 134A, Sot-227B; Continuous Collector Current Ixys Semiconductor 02AC9854
IGBT, N-CH, 1.2KV, 134A, SOT-227B; Continuous Collector Current:134A; Collector Emitter Saturation Voltage:3.5V; Power Dissipation:690W; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

IGBT, N-CH, 1.2KV, 134A, SOT-227B; Continuous Collector Current:134A; Collector Emitter Saturation Voltage:3.5V; Power Dissipation:690W; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. RS Components, Ltd. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYN100N120C3H1 279-IXYN100N120C3H1 8047619 02AC9854
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs N-Channel 134A 1200V IGBT Transistor IGBTs Igbt, N-Ch, 1.2Kv, 134A, Sot-227B; Continuous Collector Current Ixys Semiconductor
VCES 1200 volts
VCE(on) 3.5 volts
IC(max) 140 amps
Package Type SOT-227U Sot-227b TO-3
Unlock Full Specs
to access all available technical data