Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXK200N60B3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXXK200N60B3 is a 600V IGBT designed for 10-30 kHz switching in applications such as motor drives, UPS, and SMPS. It is packaged in a TO-264 case, weighing 10 g, with a mounting torque of 1.13 Nm. The device has a continuous collector current rating of 200 A at 110°C and a maximum collector-emitter voltage of 600 V. Its saturation voltage is 1.70 V at 100 A and 15 V gate-emitter voltage. The thermal resistance from junction to case is 0.092 °C/W, and it supports a maximum junction temperature of 175 °C. The IGBT is avalanche-rated, features a square RBSOA, and has a short-circuit withstand time of 10 μs. It meets RoHS standards and is optimized for low gate drive requirements and high power density.

Datasheet Summary
Powered by GS/AI

The IXXK200N60B3 is a 600V IGBT designed for 10-30 kHz switching in applications such as motor drives, UPS, and SMPS. It is packaged in a TO-264 case, weighing 10 g, with a mounting torque of 1.13 Nm. The device has a continuous collector current rating of 200 A at 110°C and a maximum collector-emitter voltage of 600 V. Its saturation voltage is 1.70 V at 100 A and 15 V gate-emitter voltage. The thermal resistance from junction to case is 0.092 °C/W, and it supports a maximum junction temperature of 175 °C. The IGBT is avalanche-rated, features a square RBSOA, and has a short-circuit withstand time of 10 μs. It meets RoHS standards and is optimized for low gate drive requirements and high power density.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXXK200N60B3 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXXK200N60B3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXXK200N60B3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXK200N60B3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 600 volts
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