Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYP8N90C3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
Powered by GS/AI

The IXYP8N90C3 is a 900V XPT™ IGBT in a TO-220 package, designed for high-frequency switching applications such as power inverters, motor drives, and PFC circuits. It has a continuous collector current rating of 8A at 110°C and a peak pulse current of 48A. The device features a collector-emitter saturation voltage of 2.15V to 3.00V at 8A and 15V gate drive, with a positive thermal coefficient for Vce(sat). It supports safe operating areas up to the breakdown voltage and is avalanche rated. Thermal resistance is 0.50 °C/W from junction to case. The package is an international standard TO-220, with a maximum junction temperature of 175°C and soldering lead temperature limit of 260°C for 10 seconds. The device meets RoHS standards and is qualified for automotive applications under AEC-Q200. This part is part of the GenX3™ IGBT family optimized for low switching losses and low gate drive requirements.

Datasheet Summary
Powered by GS/AI

The IXYP8N90C3 is a 900V XPT™ IGBT in a TO-220 package, designed for high-frequency switching applications such as power inverters, motor drives, and PFC circuits. It has a continuous collector current rating of 8A at 110°C and a peak pulse current of 48A. The device features a collector-emitter saturation voltage of 2.15V to 3.00V at 8A and 15V gate drive, with a positive thermal coefficient for Vce(sat). It supports safe operating areas up to the breakdown voltage and is avalanche rated. Thermal resistance is 0.50 °C/W from junction to case. The package is an international standard TO-220, with a maximum junction temperature of 175°C and soldering lead temperature limit of 260°C for 10 seconds. The device meets RoHS standards and is qualified for automotive applications under AEC-Q200. This part is part of the GenX3™ IGBT family optimized for low switching losses and low gate drive requirements.

Suppliers

Company
Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYP8N90C3 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYP8N90C3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYP8N90C3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYP8N90C3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 900 volts
Unlock Full Specs
to access all available technical data

Similar Products