Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYN300N65A3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYN300N65A3 is a 650V XPT IGBT in a SOT-227B miniBLOC package, designed for high-power applications such as motor drives, UPS, and switching power supplies. It has a continuous collector current rating of 270A at 110°C and a peak pulse current capability of 1600A. The device features a maximum collector-emitter saturation voltage of 1.60V at 100A and 15V gate-emitter voltage, with a thermal resistance from junction to case of 0.10°C/W. It is rated for a junction temperature range of -55°C to 175°C, supports a 2500V~ isolation voltage, and has a square RBSOA up to its breakdown voltage. The package includes aluminum nitride isolation and is compliant with international standards for mounting and terminal torque. Avalanche and short-circuit capabilities are included.

Datasheet Summary
Powered by GS/AI

The IXYN300N65A3 is a 650V XPT IGBT in a SOT-227B miniBLOC package, designed for high-power applications such as motor drives, UPS, and switching power supplies. It has a continuous collector current rating of 270A at 110°C and a peak pulse current capability of 1600A. The device features a maximum collector-emitter saturation voltage of 1.60V at 100A and 15V gate-emitter voltage, with a thermal resistance from junction to case of 0.10°C/W. It is rated for a junction temperature range of -55°C to 175°C, supports a 2500V~ isolation voltage, and has a square RBSOA up to its breakdown voltage. The package includes aluminum nitride isolation and is compliant with international standards for mounting and terminal torque. Avalanche and short-circuit capabilities are included.

Suppliers

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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYN300N65A3 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYN300N65A3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYN300N65A3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYN300N65A3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 650 volts
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