Littelfuse, Inc. Ignition IGBT, N-Channel, 18 A, 400 V LGB18N40ATH

Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary use includes Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug Applications New Design Increase Unclamped Inductive Switching (UIS) Energy per Area Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated Gate-Emitter ESD Protection Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor and Gate-Emitter Resistor
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Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary use includes Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug Applications New Design Increase Unclamped Inductive Switching (UIS) Energy per Area Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated Gate-Emitter ESD Protection Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor and Gate-Emitter Resistor
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Suppliers

Company
Product
Description
Supplier Links
Ignition IGBT, N-Channel, 18 A, 400 V - LGB18N40ATH - Littelfuse, Inc.
Rosemont, IL, United States
Ignition IGBT, N-Channel, 18 A, 400 V
LGB18N40ATH
Ignition IGBT, N-Channel, 18 A, 400 V LGB18N40ATH
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary use includes Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug Applications New Design Increase Unclamped Inductive Switching (UIS) Energy per Area Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated Gate-Emitter ESD Protection Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor and Gate-Emitter Resistor

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary use includes Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug Applications New Design Increase Unclamped Inductive Switching (UIS) Energy per Area Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated Gate-Emitter ESD Protection Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor and Gate-Emitter Resistor

Supplier's Site Datasheet
Single IGBTs - 18-LGB18N40ATHTR-ND - DigiKey
Thief River Falls, MN, United States
IGBT

IGBT

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Technical Specifications

  Littelfuse, Inc. DigiKey
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number LGB18N40ATH 18-LGB18N40ATHTR-ND
Product Name Ignition IGBT, N-Channel, 18 A, 400 V Single IGBTs
VCE(on) 1.8 volts
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