The LGB18N40ATH is a 400 V, 18 A N-channel ignition IGBT in a D2PAK package, designed for high-voltage, high-current switching in ignition and fuel injection systems. It features integrated ESD protection, a low threshold voltage for logic-level interfacing, and an unclamped inductive switching energy rating of 400 mJ at 25 °C. The device has a collector-emitter on-voltage of up to 2.1 V at 15 A and 150 °C, a thermal resistance junction-to-case of 1.3 °C/W, and operates from -55 °C to 175 °C. It is AEC-Q101 qualified. Package dimensions are 8.600-9.000 mm by 10.150-10.550 mm with a 2.54 mm pitch.
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary use includes Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug Applications New Design Increase Unclamped Inductive Switching (UIS) Energy per Area Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated Gate-Emitter ESD Protection Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor and Gate-Emitter Resistor
| Littelfuse, Inc. | DigiKey | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | LGB18N40ATH | 18-LGB18N40ATHTR-ND |
| Product Name | Ignition IGBT, N-Channel, 18 A, 400 V | Single IGBTs |
| VCE(on) | 1.8 volts |
