Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYH100N65C5

Description
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Ease of replacement and availability of isolation package Low Vcesat, low Eon/Eoff, Optimized for low switching frequencies High surge current capability Square Reverse Bias Safe Operating Areas （RBSOA) Positive thermal coefficient of Vcesat
  • Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH100N65C5 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Ease of replacement and availability of isolation package Low Vcesat, low Eon/Eoff, Optimized for low switching frequencies High surge current capability Square Reverse Bias Safe Operating Areas （RBSOA) Positive thermal coefficient of Vcesat
Datasheet
Datasheet Summary
Powered by GS/AI

The IXYH100N65C5 is a 650 V, 100 A Gen5 XPT™ IGBT in a TO-247-3L package, designed for 20-50 kHz switching applications such as power inverters, PFC circuits, and motor drives. It has a collector-emitter saturation voltage of 1.68 V at 75 A and 15 V gate-emitter voltage, a total gate charge of 313 nC, and a junction-to-case thermal resistance of 0.18 °C/W. The device supports a maximum junction temperature of 175 °C and meets the IEC 60286-3 standard for soldering. Its reverse-biased safe operating area is square, and it exhibits a positive temperature coefficient for collector-emitter saturation voltage, enabling parallel operation.

Datasheet Summary
Powered by GS/AI

The IXYH100N65C5 is a 650 V, 100 A Gen5 XPT™ IGBT in a TO-247-3L package, designed for 20-50 kHz switching applications such as power inverters, PFC circuits, and motor drives. It has a collector-emitter saturation voltage of 1.68 V at 75 A and 15 V gate-emitter voltage, a total gate charge of 313 nC, and a junction-to-case thermal resistance of 0.18 °C/W. The device supports a maximum junction temperature of 175 °C and meets the IEC 60286-3 standard for soldering. Its reverse-biased safe operating area is square, and it exhibits a positive temperature coefficient for collector-emitter saturation voltage, enabling parallel operation.

Suppliers

Company
Product
Description
Supplier Links
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH100N65C5 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXYH100N65C5
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYH100N65C5
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Ease of replacement and availability of isolation package Low Vcesat, low Eon/Eoff, Optimized for low switching frequencies High surge current capability Square Reverse Bias Safe Operating Areas （RBSOA) Positive thermal coefficient of Vcesat

Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.Advantages: Hard-switching capabilities High power densities Low gate drive requirements Ease of replacement and availability of isolation package Low Vcesat, low Eon/Eoff, Optimized for low switching frequencies High surge current capability Square Reverse Bias Safe Operating Areas （RBSOA) Positive thermal coefficient of Vcesat

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYH100N65C5
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 650 volts
Unlock Full Specs
to access all available technical data