The IXYA60N65A5 is a 650 V, 60 A Gen5 XPT™ IGBT in a TO-263 package, designed for switch-mode power applications up to 5 kHz. It features a collector-emitter saturation voltage of 1.35 V at 36 A and 15 V gate drive, a total gate charge of 128 nC, and a junction-to-case thermal resistance of 0.38 °C/W. The device supports continuous collector current of 60 A at 110 °C and pulsed current of 260 A. Its reverse-biased safe operating area is square, and it meets RoHS standards. The TO-263-2L package measures 9.65 mm to 10.41 mm in width, 8.63 mm to 9.40 mm in length, and 14.73 mm to 15.75 mm in height.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYA60N65A5 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
