The IXXH40N65B4D1 is a 650V IGBT with an integrated fast recovery diode, optimized for 5-30 kHz switching in inverters, motor drives, and SMPS. Packaged in a TO-247 case, it has a continuous collector current rating of 40 A at 110°C and a pulsed current of 225 A. Its collector-emitter saturation voltage is 1.66 V typical at 25°C and 40 A, rising to 1.94 V at 150°C. Power dissipation is 455 W at 25°C. Junction temperature ranges from -55°C to 175°C. Thermal resistance is 0.33 °C/W from junction to case for the IGBT and 0.60 °C/W for the diode. It features a square RBSOA, 10 µs short-circuit capability, avalanche rating, and low gate drive requirement. Maximum gate-emitter voltage is ±20 V continuous, ±30 V transient. The diode forward voltage is 2.6 V at 30 A and 25°C, with a reverse recovery time of 155 ns. RoHS compliant.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXH40N65B4D1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - XPT - Series: Trench - IXXH40N65B4D1 |
| VCES | 650 volts |
