The IXYH55N120B4H1 is a 1200 V, 55 A XPT Gen4 IGBT with an anti-parallel sonic diode, housed in a TO-247-3L package measuring 20.79 to 21.45 mm in diameter and 19.80 to 20.30 mm in length. It features a collector-emitter saturation voltage of 2.1 V at 55 A and 15 V gate drive, a turn-off fall time of 146 ns, and a junction temperature range from -55 °C to 175 °C. Thermal resistance from junction to case is 0.23 °C/W for the IGBT and 0.35 °C/W for the diode. The device meets AEC-Q200 and RoHS standards, and is designed for 5-30 kHz switching applications such as motor drives, power inverters, and UPS systems.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. These IGBTs have breakdown voltage from 650V till 1200V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYH55N120B4H1 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
