The IXYK110N120A4 is a 1200V XPT Trench IGBT designed for switching applications up to 5 kHz. It is housed in a TO-264 package and has a continuous collector current rating of 110 A at 110⁰C. The device features a maximum collector-emitter saturation voltage of 1.80 V at 110 A and 15 V gate-emitter voltage, with a junction temperature range of -55⁰C to 175⁰C. Thermal resistance from junction to case is 0.11 ⁰C/W, and it supports a peak pulse current of 900 A for 1 ms. The IGBT exhibits a positive thermal coefficient for collector-emitter voltage, enabling parallel operation, and meets international standard packaging requirements.
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYK110N120A4 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
