Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYT40N120A4HV

Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages
Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages
Datasheet
Datasheet Summary
Powered by GS/AI

The IXYT40N120A4HV is a 1200V XPT Trench IGBT designed for high-power inverter, UPS, motor drive, and PFC applications. It is packaged in a TO-268HV case with a weight of 4 g. The device has a continuous collector current rating of 40 A at 110°C and a peak collector current of 275 A at 25°C. Its collector-emitter saturation voltage is 1.56 V typ at 32 A and 15 V gate-emitter voltage, rising to 1.80 V at 150°C junction temperature. The thermal resistance from junction to case is 0.25 °C/W. It features a positive thermal coefficient of Vce(sat), enabling parallel operation, and low gate charge requirements. Switching times are 220 ns typ for fall time under clamped inductive load conditions. The device complies with international standard packaging and is rated for operation from -55 to +175 °C junction temperature.

Datasheet Summary
Powered by GS/AI

The IXYT40N120A4HV is a 1200V XPT Trench IGBT designed for high-power inverter, UPS, motor drive, and PFC applications. It is packaged in a TO-268HV case with a weight of 4 g. The device has a continuous collector current rating of 40 A at 110°C and a peak collector current of 275 A at 25°C. Its collector-emitter saturation voltage is 1.56 V typ at 32 A and 15 V gate-emitter voltage, rising to 1.80 V at 150°C junction temperature. The thermal resistance from junction to case is 0.25 °C/W. It features a positive thermal coefficient of Vce(sat), enabling parallel operation, and low gate charge requirements. Switching times are 220 ns typ for fall time under clamped inductive load conditions. The device complies with international standard packaging and is rated for operation from -55 to +175 °C junction temperature.

Suppliers

Company
Product
Description
Supplier Links
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYT40N120A4HV - Littelfuse, Inc.
Rosemont, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXYT40N120A4HV
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYT40N120A4HV
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages

Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Positive thermal coefficient of Vcesat International standard packages

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYT40N120A4HV
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 1200 volts
Unlock Full Specs
to access all available technical data