The IXYA50N65C3 is a 650V IGBT designed for 20-60kHz switching applications, available in a TO-263 package with a weight of 2.5 g. It has a continuous collector current rating of 50 A at 110°C and a peak collector current of 250 A for 1 ms. The device features a typical collector-emitter saturation voltage of 2.10 V at 36 A and 15 V gate-emitter voltage, and a thermal resistance junction-to-case of 0.25 °C/W. It is avalanche-rated, has a square reverse-bias safe operating area, and a short-circuit capability of 8 µs. The part meets AEC-Q200 and RoHS standards, and is qualified for junction temperatures from -55°C to 175°C.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYA50N65C3 |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
