Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH100N65B3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYH100N65B3 is a 650V IGBT designed for 10-30 kHz switching applications in power inverters, UPS, motor drives, and SMPS. It is packaged in a TO-247 case with a weight of 6 g and a maximum lead temperature for soldering of 300°C. The device has a continuous collector current rating of 100 A at 110°C, a peak collector current of 460 A for 1 ms, and a collector-emitter saturation voltage of 1.85 V at 70 A and 15 V gate drive. It features a square RBSOA, avalanche capability, short-circuit tolerance, and an optimal thermal resistance from junction to case of 0.18°C/W. The IGBT is rated for junction temperatures from -55°C to 175°C and meets international standard package requirements. It is avalanche rated and optimized for low gate drive requirements and high power density.

Datasheet Summary
Powered by GS/AI

The IXYH100N65B3 is a 650V IGBT designed for 10-30 kHz switching applications in power inverters, UPS, motor drives, and SMPS. It is packaged in a TO-247 case with a weight of 6 g and a maximum lead temperature for soldering of 300°C. The device has a continuous collector current rating of 100 A at 110°C, a peak collector current of 460 A for 1 ms, and a collector-emitter saturation voltage of 1.85 V at 70 A and 15 V gate drive. It features a square RBSOA, avalanche capability, short-circuit tolerance, and an optimal thermal resistance from junction to case of 0.18°C/W. The IGBT is rated for junction temperatures from -55°C to 175°C and meets international standard package requirements. It is avalanche rated and optimized for low gate drive requirements and high power density.

Suppliers

Company
Product
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600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYH100N65B3 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYH100N65B3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYH100N65B3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYH100N65B3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 650 volts
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