Littelfuse, Inc. -50V to -200V P-Channel Power MOSFETs IXTY10P15T

Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
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Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
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Datasheet
Datasheet Summary
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The IXTY10P15T is a P-channel enhancement mode MOSFET designed for high-side switching, push-pull amplifiers, and battery charger applications. It is packaged in a TO-252 case with a weight of 0.35 g. The device has a drain-source breakdown voltage of -150 V, a continuous drain current of -10 A at 25°C, and a maximum drain-source on-resistance of 350 mΩ at -10 V gate voltage. It is avalanche rated with an energy rating of 200 mJ and features a fast intrinsic diode. The thermal resistance from junction to case is 1.5 °C/W. The device meets international standard package specifications and is rated for operation from -55 °C to 150 °C junction temperature.

Datasheet Summary
Powered by GS/AI

The IXTY10P15T is a P-channel enhancement mode MOSFET designed for high-side switching, push-pull amplifiers, and battery charger applications. It is packaged in a TO-252 case with a weight of 0.35 g. The device has a drain-source breakdown voltage of -150 V, a continuous drain current of -10 A at 25°C, and a maximum drain-source on-resistance of 350 mΩ at -10 V gate voltage. It is avalanche rated with an energy rating of 200 mJ and features a fast intrinsic diode. The thermal resistance from junction to case is 1.5 °C/W. The device meets international standard package specifications and is rated for operation from -55 °C to 150 °C junction temperature.

Suppliers

Company
Product
Description
Supplier Links
-50V to -200V P-Channel Power MOSFETs - IXTY10P15T - Littelfuse, Inc.
Rosemont, IL, United States
-50V to -200V P-Channel Power MOSFETs
IXTY10P15T
-50V to -200V P-Channel Power MOSFETs IXTY10P15T
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTY10P15T
MOSFET Transistor 278-IXTY10P15T
Power Field-Effect Transistor, Product overview: IXTY10P15T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTY10P15T can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTY10P15T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTY10P15T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTY10P15T 278-IXTY10P15T
Product Name -50V to -200V P-Channel Power MOSFETs MOSFET Transistor
Polarity P-Channel
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