Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYP30N65C3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
Powered by GS/AI

The IXYP30N65C3 is a 650V IGBT designed for 20-60kHz switching applications in power inverters, motor drives, UPS, and PFC circuits. It is available in TO-220 and TO-247 packages, with a weight of 3g and 6g respectively. The device has a continuous collector current rating of 30A at 110°C and a peak pulse current of 118A at 25°C. Its collector-emitter saturation voltage is 2.35V typ at 30A and 15V gate drive, increasing to 2.58V at 150°C. The IGBT features a square RBSOA, avalanche ruggedness, and short-circuit capability with a peak junction temperature of 175°C. Thermal resistance from junction to case is 0.55°C/W for TO-220 and 0.21°C/W for TO-247. It meets international standard package requirements and is optimized for low gate drive requirements and high power density.

Datasheet Summary
Powered by GS/AI

The IXYP30N65C3 is a 650V IGBT designed for 20-60kHz switching applications in power inverters, motor drives, UPS, and PFC circuits. It is available in TO-220 and TO-247 packages, with a weight of 3g and 6g respectively. The device has a continuous collector current rating of 30A at 110°C and a peak pulse current of 118A at 25°C. Its collector-emitter saturation voltage is 2.35V typ at 30A and 15V gate drive, increasing to 2.58V at 150°C. The IGBT features a square RBSOA, avalanche ruggedness, and short-circuit capability with a peak junction temperature of 175°C. Thermal resistance from junction to case is 0.55°C/W for TO-220 and 0.21°C/W for TO-247. It meets international standard package requirements and is optimized for low gate drive requirements and high power density.

Suppliers

Company
Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYP30N65C3 - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYP30N65C3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYP30N65C3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYP30N65C3
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 650 volts
Unlock Full Specs
to access all available technical data