The IXYX120N120B3 is a 1200V XPT™ IGBT in a PLUS247 package, designed for high-frequency switching applications up to 30 kHz. It has a continuous collector current rating of 120 A at 110°C and a peak collector current of 800 A for 1 ms. The device features a maximum collector-emitter saturation voltage of 2.2 V at 100 A and 15 V gate drive, and a thermal resistance junction-to-case of 0.10 °C/W. It is avalanche rated, has a square RBSOA, and a negative temperature coefficient for Vce(sat). The package weighs 6 g and supports a maximum lead temperature of 300 °C for soldering. It meets AEC-Q200 and RoHS standards.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
Insulated Gate Bipolar Transistor, Product overview: IXYX120N120B3 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXYX120N120B3 can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYX120N120B3 | 279-IXYX120N120B3 |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs | IGBT Transistor |
| VCES | 1200 volts |
