Littelfuse, Inc. Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA80R1200VA MIXA80R1200VA

Description
The build in boost configuration offers a compact solution either in boost (PFC) or brake applications and in combination with buck series a solution for switched reluctance motor drives.
Description
The build in boost configuration offers a compact solution either in boost (PFC) or brake applications and in combination with buck series a solution for switched reluctance motor drives.
Datasheet
Datasheet Summary
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The MIXA80R1200VA is a V1-A-Pack IGBT module with a 1200 V collector-emitter voltage and 120 A collector current at 25°C, designed for boost chopper applications. It features a rugged XPT design with 10 µs short-circuit capability, low gate charge of 230 nC, and a SONIC™ diode with reverse recovery time of 350 ns. The IGBT has a saturation voltage of 2.2 V at 125°C and thermal resistance junction-to-case of 0.32 K/W. The diode has a forward voltage of 2.1 V at 125°C and thermal resistance junction-to-case of 0.4 K/W. Mounting is via solder pins, with a height of 17 mm and DCB ceramic base plate. It has 3600 V RMS isolation, operates from -40°C to 125°C, and is RoHS compliant. Case-to-heatsink thermal resistance is 0.20 K/W for both devices.

Datasheet Summary
Powered by GS/AI

The MIXA80R1200VA is a V1-A-Pack IGBT module with a 1200 V collector-emitter voltage and 120 A collector current at 25°C, designed for boost chopper applications. It features a rugged XPT design with 10 µs short-circuit capability, low gate charge of 230 nC, and a SONIC™ diode with reverse recovery time of 350 ns. The IGBT has a saturation voltage of 2.2 V at 125°C and thermal resistance junction-to-case of 0.32 K/W. The diode has a forward voltage of 2.1 V at 125°C and thermal resistance junction-to-case of 0.4 K/W. Mounting is via solder pins, with a height of 17 mm and DCB ceramic base plate. It has 3600 V RMS isolation, operates from -40°C to 125°C, and is RoHS compliant. Case-to-heatsink thermal resistance is 0.20 K/W for both devices.

Suppliers

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Description
Supplier Links
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA80R1200VA - MIXA80R1200VA - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA80R1200VA
MIXA80R1200VA
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA80R1200VA MIXA80R1200VA
The build in boost configuration offers a compact solution either in boost (PFC) or brake applications and in combination with buck series a solution for switched reluctance motor drives.

The build in boost configuration offers a compact solution either in boost (PFC) or brake applications and in combination with buck series a solution for switched reluctance motor drives.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number MIXA80R1200VA
Product Name Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Boost Choppers - Series: Boost Configuration XPT IGBT - MIXA80R1200VA
VCES 1200 volts
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