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Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Features: Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages Applications: Pulser circuits Laser and X-ray generators High-voltage power supplies High-voltage test equipment Capacitor discharge circuits AC switches Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems
XPT IGBT 25A 2500V TO247PLUS-HV - Discrete Semiconductors - IGBT Transistors
XPT IGBT 25A 2500V TO247PLUS-HV - Discrete Semiconductors - IGBT Transistors
| Littelfuse, Inc. | RS Components, Ltd. | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYX25N250CV1HV | 1464257 |
| Product Name | 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs | |
| VCES | 2500 volts | |
| VCE(on) | 4 volts | |
| IC(max) | 95 amps | 95 amps |
