The IXYX25N250CV1HV is a 2500 V, 25 A continuous high-voltage IGBT with an integrated fast recovery diode, packaged in a TO-247PLUS-HV mounting style. It features a collector-emitter saturation voltage of 3.4 V to 4.0 V at 25°C and 4.7 V at 150°C, a gate-emitter threshold voltage of 3.0 V to 5.0 V, and a thermal resistance from junction to case of 0.16 °C/W. The device supports a peak collector current of 235 A for 1 ms and has a maximum junction temperature of 175 °C. Switching times are 246 ns for turn-off delay at 25°C. It is designed for use in switch-mode and resonant-mode power supplies, uninterruptible power supplies, laser generators, capacitor discharge circuits, and AC switches.
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYX25N250CV1HV |
| Product Name | 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 2500 volts |
