The IXYQ30N65B3D1 is a 650V, 30A IGBT with an integrated fast anti-parallel diode, designed for 5-30 kHz switching in power inverters, motor drives, and PFC circuits. It is packaged in a TO-3P case, weighing 5.5 g, with a maximum junction temperature of 175°C and a power dissipation of 270 W at 25°C. The device features a square RBSOA, avalanche ruggedness, and short-circuit capability with a maximum pulse width of 5 μs. Its collector-emitter saturation voltage is 1.8-2.1 V at 30 A and 15 V gate drive. Thermal resistance is 0.60 °C/W from junction to case for the diode and 0.55 °C/W for the IGBT. The part meets RoHS standards and is rated for operating temperatures from -55°C to 175°C.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYQ30N65B3D1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYQ30N65B3D1 |
| VCES | 650 volts |
