Littelfuse, Inc. 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs IXYL60N450

Description
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
Description
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages
Datasheet
Datasheet Summary
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The IXYL60N450 is a 4500V XPT™ IGBT designed for high-voltage switch-mode and resonant-mode power supplies, UPS, laser generators, and capacitor discharge circuits. It is packaged in an ISOPLUS i5-PakTM with an electrically isolated tab providing 4000V AC isolation. The device has a continuous collector current rating of 38A at 110°C and a peak collector current of 680A for 1ms. Its collector-emitter saturation voltage is 2.64V to 3.30V at 60A and 15V gate drive, with a maximum junction temperature of 150°C and a junction-to-case thermal resistance of 0.30 °C/W. The package supports a maximum lead temperature of 300°C for soldering and weighs 8g. The part meets UL 94 V-0 flammability standards and is RoHS compliant.

Datasheet Summary
Powered by GS/AI

The IXYL60N450 is a 4500V XPT™ IGBT designed for high-voltage switch-mode and resonant-mode power supplies, UPS, laser generators, and capacitor discharge circuits. It is packaged in an ISOPLUS i5-PakTM with an electrically isolated tab providing 4000V AC isolation. The device has a continuous collector current rating of 38A at 110°C and a peak collector current of 680A for 1ms. Its collector-emitter saturation voltage is 2.64V to 3.30V at 60A and 15V gate drive, with a maximum junction temperature of 150°C and a junction-to-case thermal resistance of 0.30 °C/W. The package supports a maximum lead temperature of 300°C for soldering and weighs 8g. The part meets UL 94 V-0 flammability standards and is RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs - IXYL60N450 - Littelfuse, Inc.
Rosemont, IL, United States
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs
IXYL60N450
1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs IXYL60N450
Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages

Designed using the proprietary thin-wafer XPT™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their on-state voltage, these high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage devices. Consequently, this results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system. The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI). Advantages: Higher efficiency Elimination of multiple series-connected devices Increased reliability of power systems Thin wafer XPT™ technology Low on-state voltages VCE(sat) Co-packed fast recovery diodes Positive temperature coefficient of VCE(sat) International standard size high-voltage packages

Supplier's Site Datasheet
Trans, Igbt, 4.5Kv, 90A, Isoplus I5-Pak; Continuous Collector Current Littelfuse - 03AH2079 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Igbt, 4.5Kv, 90A, Isoplus I5-Pak; Continuous Collector Current Littelfuse
03AH2079
Trans, Igbt, 4.5Kv, 90A, Isoplus I5-Pak; Continuous Collector Current Littelfuse 03AH2079
TRANS, IGBT, 4.5KV, 90A, ISOPLUS I5-PAK; Continuous Collector Current:90A; Collector Emitter Saturation Voltage:2.64V; Power Dissipation:417W; Collector Emitter Voltage Max:4.5kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes

TRANS, IGBT, 4.5KV, 90A, ISOPLUS I5-PAK; Continuous Collector Current:90A; Collector Emitter Saturation Voltage:2.64V; Power Dissipation:417W; Collector Emitter Voltage Max:4.5kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYL60N450 03AH2079
Product Name 1700V - 4500V XPT™ (eXtreme-light Punch Through) IGBTs Trans, Igbt, 4.5Kv, 90A, Isoplus I5-Pak; Continuous Collector Current Littelfuse
VCES 4500 volts
VCE(on) 3.3 volts
IC(max) 90 amps
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