Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXXK110N65B4H1

Description
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas (RBSOA) Positive thermal coefficient of Vcesat
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Description
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas (RBSOA) Positive thermal coefficient of Vcesat
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Datasheet
Datasheet Summary
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The IXXK110N65B4H1 is a 650V XPT Trench IGBT in a TO-264 package, designed for 10-30kHz switching applications. It has a continuous collector current rating of 110A at 110°C, a collector-emitter saturation voltage of 2.10V at 110A and 15V gate-emitter voltage, and a short-circuit withstand time of 10μs. The device includes an anti-parallel sonic diode with a forward voltage of 2.3V at 100A and a reverse recovery time of 100ns. Thermal resistance from junction to case is 0.17°C/W, and the case temperature is limited to 175°C. The IGBT features a square RBSOA, high surge current capability up to 570A for 1ms, and a gate-emitter voltage rating of ±20V continuous. Mounting torque is specified at 1.13 Nm for the TO-264 package.

Datasheet Summary
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The IXXK110N65B4H1 is a 650V XPT Trench IGBT in a TO-264 package, designed for 10-30kHz switching applications. It has a continuous collector current rating of 110A at 110°C, a collector-emitter saturation voltage of 2.10V at 110A and 15V gate-emitter voltage, and a short-circuit withstand time of 10μs. The device includes an anti-parallel sonic diode with a forward voltage of 2.3V at 100A and a reverse recovery time of 100ns. Thermal resistance from junction to case is 0.17°C/W, and the case temperature is limited to 175°C. The IGBT features a square RBSOA, high surge current capability up to 570A for 1ms, and a gate-emitter voltage rating of ±20V continuous. Mounting torque is specified at 1.13 Nm for the TO-264 package.

Suppliers

Company
Product
Description
Supplier Links
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXXK110N65B4H1 - Littelfuse, Inc.
Rosemont, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXXK110N65B4H1
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXXK110N65B4H1
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas (RBSOA) Positive thermal coefficient of Vcesat

Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements Low Vcesat, low Eon/Eoff Optimized for medium and high switching frequencies 10kHz up to 60kHz High surge current capability and short circuit capability Square Reverse Bias Safe Operating Areas (RBSOA) Positive thermal coefficient of Vcesat

Supplier's Site Datasheet
Singapore, Singapore
IGBT Transistor
279-IXXK110N65B4H1
IGBT Transistor 279-IXXK110N65B4H1
Insulated Gate Bipolar Transistor, Product overview: IXXK110N65B4H1 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXXK110N65B4H1 can be used for catalog matching and distributor lookup.

Insulated Gate Bipolar Transistor, Product overview: IXXK110N65B4H1 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXXK110N65B4H1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - 1258051 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1258051
IGBTs 1258051
IGBT 110A 650V TO264

IGBT 110A 650V TO264

Supplier's Site
IGBTs - 1684588 - RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1684588
IGBTs 1684588
IGBT 110A 650V TO264

IGBT 110A 650V TO264

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. RS Components, Ltd.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXXK110N65B4H1 279-IXXK110N65B4H1 1258051
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IGBT Transistor IGBTs
VCES 650 volts
VCE(on) 2.1 volts
IC(max) 250 amps
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