The IXYX200N65B5 is a 650 V, 200 A Gen5 XPT™ IGBT in a PLUS-247-3L package, designed for medium-frequency switching applications between 5 and 30 kHz. It has a collector-emitter saturation voltage of 1.45 V at 100 A and 15 V gate-emitter voltage, a junction-to-case thermal resistance of 0.093 °C/W, and a maximum junction temperature of 175 °C. The device features a square reverse-biased safe operating area, positive thermal coefficient of Vₓₑ(sat), and low gate charge of 790 nC. The package dimensions are specified with a body length of 19.80 to 20.30 mm and a lead pitch of 5.45 mm BSC.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYX200N65B5 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
