The IXYX100N65C3D1 is a 650V IGBT with a 100A collector current rating, designed for 20-60kHz switching applications in power inverters, motor drives, UPS, PFC circuits, and battery chargers. It features an anti-parallel ultra-fast diode and is housed in the PLUS247 package, weighing 6g. The device has a maximum junction temperature of 175°C, a saturated collector-emitter voltage of 2.3V at 100A and 15V gate-emitter voltage, and a thermal resistance from junction to case of 0.15°C/W for the mount surface. It is avalanche-rated, has a square RBSOA, and short-circuit capability with a clamped inductive turn-off time of 60ns at 150°C. The IGBT meets the AEC-Q200 standard and RoHS compliance, and is optimized for low gate drive requirements and high power density.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYX100N65C3D1 |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
