Littelfuse, Inc. Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA150W1200TEH MIXA150W1200TEH

Description
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA150W1200TEH
Description
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA150W1200TEH
Datasheet
Datasheet Summary
Powered by GS/AI

The MIXA150W1200TEH is a six-pack IGBT module with integrated diodes for three-phase inverter applications. It features an insulated copper base plate and soldering pins in an E3-Pack outline. Each IGBT is rated for 1200 V collector-emitter voltage and 220 A continuous current at 25°C, with a saturation voltage of 1.8 V at 150 A and 25°C. The IGBTs are short-circuit rated for 10 µs and have a total gate charge of 470 nC. The integrated diodes have a 1200 V repetitive reverse voltage and 190 A forward current at 25°C. A built-in NTC thermistor provides temperature sensing with 5.0 kΩ resistance at 25°C. Thermal resistance is 0.18 K/W for IGBTs and 0.28 K/W for diodes. The operating junction temperature range is -40°C to 125°C, with a maximum virtual junction temperature of 150°C. Isolation voltage is 3 kV, and the module weighs 300 g.

Datasheet Summary
Powered by GS/AI

The MIXA150W1200TEH is a six-pack IGBT module with integrated diodes for three-phase inverter applications. It features an insulated copper base plate and soldering pins in an E3-Pack outline. Each IGBT is rated for 1200 V collector-emitter voltage and 220 A continuous current at 25°C, with a saturation voltage of 1.8 V at 150 A and 25°C. The IGBTs are short-circuit rated for 10 µs and have a total gate charge of 470 nC. The integrated diodes have a 1200 V repetitive reverse voltage and 190 A forward current at 25°C. A built-in NTC thermistor provides temperature sensing with 5.0 kΩ resistance at 25°C. Thermal resistance is 0.18 K/W for IGBTs and 0.28 K/W for diodes. The operating junction temperature range is -40°C to 125°C, with a maximum virtual junction temperature of 150°C. Isolation voltage is 3 kV, and the module weighs 300 g.

Suppliers

Company
Product
Description
Supplier Links
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA150W1200TEH - MIXA150W1200TEH - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA150W1200TEH
MIXA150W1200TEH
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA150W1200TEH MIXA150W1200TEH
Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA150W1200TEH

Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA150W1200TEH

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number MIXA150W1200TEH
Product Name Power Semiconductors & Control ICs - Power Modules - IGBT Modules - Three-Phase Bridges - IGBT Modules - Series: Six Pack XPT IGBT Module - MIXA150W1200TEH
VCES 1200 volts
Unlock Full Specs
to access all available technical data