The IXXX160N65C4 is a 650V trench IGBT designed for 20-60 kHz switching in applications such as motor drives, UPS, and power inverters. It is available in TO-264 and PLUS247 packages, with a maximum continuous collector current of 160 A and a peak pulse current of 800 A. The collector-emitter saturation voltage is 1.7 V at 160 A and 15 V gate-emitter bias, rising to 2.1 V at 150 °C junction temperature. It has a maximum junction temperature of 175 °C and thermal resistance from junction to case of 0.16 °C/W. The device features a square RBSOA, short-circuit capability of 10 μs at 320 A, and a low gate charge of 77 nC. It meets RoHS standards and is rated for -55 °C to 175 °C operating temperature range.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA).These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXXX160N65C4 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
