Littelfuse, Inc. Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYA20N120B4HV

Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel. Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Optimized for medium switching frequencies 10kHz up to 30kHz Positive thermal coefficient of Vcesat International standard packages
  • Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYA20N120B4HV - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel. Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Optimized for medium switching frequencies 10kHz up to 30kHz Positive thermal coefficient of Vcesat International standard packages
Datasheet
Datasheet Summary
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The IXYA20N120B4HV is a 1200V, 20A IGBT in a TO-263HV package, optimized for switching applications from 5 to 30 kHz. It features a maximum collector-emitter voltage of 1200 V, a continuous collector current of 20 A at 110°C, and a saturation voltage of 2.10 V at 20 A and 15 V gate drive. Thermal resistance from junction to case is 0.40 °C/W. The device has a positive thermal coefficient of Vce(sat), supports clamped inductive switching with a single-shot safe operating area of 40 A, and holds international standard package compliance.

Datasheet Summary
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The IXYA20N120B4HV is a 1200V, 20A IGBT in a TO-263HV package, optimized for switching applications from 5 to 30 kHz. It features a maximum collector-emitter voltage of 1200 V, a continuous collector current of 20 A at 110°C, and a saturation voltage of 2.10 V at 20 A and 15 V gate drive. Thermal resistance from junction to case is 0.40 °C/W. The device has a positive thermal coefficient of Vce(sat), supports clamped inductive switching with a single-shot safe operating area of 40 A, and holds international standard package compliance.

Suppliers

Company
Product
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Supplier Links
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXYA20N120B4HV - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
IXYA20N120B4HV
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs IXYA20N120B4HV
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel. Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Optimized for medium switching frequencies 10kHz up to 30kHz Positive thermal coefficient of Vcesat International standard packages

Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel. Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package Low on-state voltages Vcesat Optimized for medium switching frequencies 10kHz up to 30kHz Positive thermal coefficient of Vcesat International standard packages

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYA20N120B4HV
Product Name Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs
VCES 1200 volts
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