Littelfuse, Inc. Ignition IGBT, N-Channel, 20 A, 365 V LGB8207TH

Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug and Driver-on-Coil Applications Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Gate Resistor (RG) = 70 Ω
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Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug and Driver-on-Coil Applications Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Gate Resistor (RG) = 70 Ω
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Suppliers

Company
Product
Description
Supplier Links
Ignition IGBT, N-Channel, 20 A, 365 V - LGB8207TH - Littelfuse, Inc.
Rosemont, IL, United States
Ignition IGBT, N-Channel, 20 A, 365 V
LGB8207TH
Ignition IGBT, N-Channel, 20 A, 365 V LGB8207TH
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug and Driver-on-Coil Applications Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Gate Resistor (RG) = 70 Ω

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug and Driver-on-Coil Applications Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Gate Resistor (RG) = 70 Ω

Supplier's Site Datasheet
Single IGBTs - 18-LGB8207THTR-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
18-LGB8207THTR-ND
Single IGBTs 18-LGB8207THTR-ND
IGBT

IGBT

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Technical Specifications

  Littelfuse, Inc. DigiKey
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number LGB8207TH 18-LGB8207THTR-ND
Product Name Ignition IGBT, N-Channel, 20 A, 365 V Single IGBTs
VCE(on) 1.5 volts
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