The LGB8207TH is a 365 V, 20 A N-channel ignition IGBT in a D2PAK package, designed for high-voltage, high-current switching in ignition and fuel injection systems. It features integrated ESD protection, a gate resistor of 70 Ω, and a minimum avalanche energy of 500 mJ. The device has a thermal resistance from junction to case of 0.9 °C/W and is rated for operating temperatures from -55 °C to +175 °C. It is AEC-Q101 qualified and complies with RoHS standards.
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive Ideal for Coil-on-Plug and Driver-on-Coil Applications Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Gate Resistor (RG) = 70 Ω
| Littelfuse, Inc. | DigiKey | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | LGB8207TH | 18-LGB8207THTR-ND |
| Product Name | Ignition IGBT, N-Channel, 20 A, 365 V | Single IGBTs |
| VCE(on) | 1.5 volts |
