The IXYH75N65C3D1 is a 650 V IGBT with a continuous collector current rating of 75 A at 110°C, packaged in a TO-247 AD case. It features an optimized design for 20-60 kHz switching, a square reverse bias safe operating area (RBSOA), avalanche capability, and a short-circuit rated ultra-fast anti-parallel freewheeling diode. The device has a maximum junction temperature of 175°C, a thermal resistance from junction to case of 0.20 °C/W for the IGBT and 0.45 °C/W for the diode, and meets RoHS standards. It is rated for a maximum mounting torque of 1.13 Nm and weighs 6 g. The IGBT exhibits a collector-emitter saturation voltage of 1.8-2.3 V at 60 A and 15 V gate drive, and supports a transient collector-emitter voltage of up to 30 V.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYH75N65C3D1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYH75N65C3D1 |
| VCES | 650 volts |
