The MMIX1F40N110P is an N-channel enhancement mode MOSFET rated for 1100 V drain-source voltage and 24 A continuous drain current at 25°C, featuring a 290 mΩ maximum on-resistance and a 500 W power dissipation at 25°C. It is packaged in an SMPD format with an isolated direct-copper bond substrate, offering 2500 V~ isolation voltage and a thermal resistance of 0.25 °C/W from junction to case. The device includes a fast intrinsic rectifier with 300 ns reverse recovery time and is rated for operation from -55°C to +150°C. It is avalanche rated with 2 J single-pulse energy and complies with RoHS standards.
Weighing only 8g, the SMPD package is much lighter (typically by 50%) than comparable conventional power modules, thereby enabling lower weight power systems. Due to its compact and ultra-low profile package, it is possible to use the same heat sink for multiple devices, saving PCB space. An added benefit of being smaller and lighter is that it provides better protection against vibrations and g-forces, especially if used in portable appliances, increasing the life expectancy and reliability of these devices. Configurations: Buck Boost Full-bridge Half-bridge Phase leg Single Ultra-low and compact package profile Surface mountable via standard reflow process Low package weight Up to 4.5 kV ceramic isolation (DCB) Low package inductance Excellent thermal performance High power cycling capability
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | MMIX1F40N110P |
| Product Name | 40V - 1100V HiPerFETs and MOSFETs in Surface Mount Power Device (SMPD) Packages |
| Package Type | SMPD |
