The IXYR50N120C3D1 is a 1200V XPT IGBT with an integrated ultra-fast anti-parallel diode, designed for high-frequency switching applications up to 50 kHz. It is packaged in an ISOPLUS247 case with an electrically isolated tab and weighs 5 g. The device has a continuous collector current rating of 32 A at 90°C and a maximum collector-emitter voltage of 1200 V. Its collector-emitter saturation voltage is 3.5 V at 25°C and 4.2 V at 150°C with I_C = 50 A and V_GE = 15 V. The thermal resistance from junction to case is 0.43 °C/W. It features a square RBSOA, positive thermal coefficient of V_CE(sat), and meets RoHS standards. The device is qualified for industrial use with an operating junction temperature range of -55 °C to 150 °C.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYR50N120C3D1 |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
