The IXYA55N65B5 is a 650 V, 55 A Gen5 XPT™ IGBT in a TO-263-2L package, optimized for 5-30 kHz switching applications such as power inverters, PFC circuits, and motor drives. It features a collector-emitter saturation voltage of 1.50 V max at 36 A and 15 V gate-emitter voltage, a thermal resistance junction-to-case of 0.38 °C/W, and a reverse-biased safe operating area (RBSOA). The device supports a maximum junction temperature of 175 °C and meets international standard packaging requirements. Its square RBSOA and low gate drive requirement support robust, high-efficiency operation.
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYA55N65B5 |
| Product Name | Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 650 volts |
