The IXYA20N65C3D1 is a 650 V, 20 A silicon IGBT in a TO-263 AA package with an integrated fast anti-parallel diode, designed for 20-60 kHz switching applications. It has a maximum collector current of 20 A at 110°C, a collector-emitter saturation voltage of 2.50 V at 20 A and 15 V gate-emitter voltage, and a maximum junction temperature of 175°C. The device is avalanche-rated, has square RBSOA, and short-circuit capability. The TO-263 AA package measures 15.88 mm in lead length, 10.41 mm in body width, and weighs 2.5 g. Mounting torque for the TO-263 package is 10-65 N (2.2-14.6 lb). Thermal resistance from junction to case is 0.65 °C/W.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYA20N65C3D1 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYA20N65C3D1 |
| VCES | 650 volts |
