Littelfuse, Inc. Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYN120N65C3D1 IXYN120N65C3D1

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYN120N65C3D1 - IXYN120N65C3D1 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
Datasheet
Datasheet Summary
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The IXYN120N65C3D1 is a 650V IGBT with an integrated fast recovery diode, designed for switching applications between 20-60kHz. It is packaged in an SOT-227B miniBLOC case, weighing 30 grams. The device handles a continuous collector current of 100A at 110°C and 72A for the diode at the same temperature. Maximum collector-emitter voltage is 650V, with a collector-emitter saturation voltage of 2.8V at 100A and 15V gate drive. It features a square RBSOA, avalanche capability, and short-circuit endurance of 8μs at 150°C junction temperature. Thermal resistance from junction to case is 0.18°C/W, and isolation voltage is rated at 2500V~. The device operates from -55°C to 175°C and mounts with a torque of 1.5Nm.

Datasheet Summary
Powered by GS/AI

The IXYN120N65C3D1 is a 650V IGBT with an integrated fast recovery diode, designed for switching applications between 20-60kHz. It is packaged in an SOT-227B miniBLOC case, weighing 30 grams. The device handles a continuous collector current of 100A at 110°C and 72A for the diode at the same temperature. Maximum collector-emitter voltage is 650V, with a collector-emitter saturation voltage of 2.8V at 100A and 15V gate drive. It features a square RBSOA, avalanche capability, and short-circuit endurance of 8μs at 150°C junction temperature. Thermal resistance from junction to case is 0.18°C/W, and isolation voltage is rated at 2500V~. The device operates from -55°C to 175°C and mounts with a torque of 1.5Nm.

Suppliers

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Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYN120N65C3D1 - IXYN120N65C3D1 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYN120N65C3D1
IXYN120N65C3D1
Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYN120N65C3D1 IXYN120N65C3D1
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYN120N65C3D1
Product Name Power Semiconductors & Control ICs - IGBTs - XPT - Series: Planar - IXYN120N65C3D1
VCES 650 volts
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