Littelfuse, Inc. 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYX100N120C3

Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
  • 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYX100N120C3 - Littelfuse, Inc.
    Littelfuse, Inc.
  • IGBTs - 8080225 - RS Components, Ltd.
    RS Components, Ltd.
  • IGBTs - 8080225P - RS Components, Ltd.
    RS Components, Ltd.
  • IGBTs - 1684771 - RS Components, Ltd.
    RS Components, Ltd.
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Description
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package
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Datasheet
Datasheet Summary
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The IXYX100N120C3 is a 1200V XPT IGBT designed for high-frequency switching applications up to 50 kHz, featuring low switching losses and a square RBSOA. It is packaged in the PLUS247 style with a collector-to-emitter voltage rating of 1200V and a continuous collector current of 100A at 110°C. The device has a maximum collector-emitter saturation voltage of 3.5V at 100A and 25°C, increasing to 4.1V at 150°C. It is avalanche-rated, has a positive thermal coefficient for Vce(sat), and supports mounting torques up to 1.13 Nm. Thermal resistance from junction to case is 0.13°C/W. It is optimized for use in UPS, motor drives, SMPS, PFC circuits, and welding machines.

Datasheet Summary
Powered by GS/AI

The IXYX100N120C3 is a 1200V XPT IGBT designed for high-frequency switching applications up to 50 kHz, featuring low switching losses and a square RBSOA. It is packaged in the PLUS247 style with a collector-to-emitter voltage rating of 1200V and a continuous collector current of 100A at 110°C. The device has a maximum collector-emitter saturation voltage of 3.5V at 100A and 25°C, increasing to 4.1V at 150°C. It is avalanche-rated, has a positive thermal coefficient for Vce(sat), and supports mounting torques up to 1.13 Nm. Thermal resistance from junction to case is 0.13°C/W. It is optimized for use in UPS, motor drives, SMPS, PFC circuits, and welding machines.

Suppliers

Company
Product
Description
Supplier Links
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs - IXYX100N120C3 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs
IXYX100N120C3
600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IXYX100N120C3
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications. Advantages: Hard-switching capability High power density Low gate drive requirements Optimized for mid- and high-switching frequencies Square RBSOA Short circuit capability Ultra-fast anti-parallel diodes International standard package

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
IGBT Transistor
279-IXYX100N120C3
IGBT Transistor 279-IXYX100N120C3
Insulated Gate Bipolar Transistor, Product overview: IXYX100N120C3 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXYX100N120C3 can be used for catalog matching and distributor lookup.

Insulated Gate Bipolar Transistor, Product overview: IXYX100N120C3 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXYX100N120C3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - 8080225 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
8080225
IGBTs 8080225
IGBT N-Ch 1200V 100A XPT GenX3 PLUS247

IGBT N-Ch 1200V 100A XPT GenX3 PLUS247

Supplier's Site
IGBTs - 8080225P - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
8080225P
IGBTs 8080225P
IGBT N-Ch 1200V 100A XPT GenX3 PLUS247

IGBT N-Ch 1200V 100A XPT GenX3 PLUS247

Supplier's Site
IGBTs - 1684771 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
IGBTs
1684771
IGBTs 1684771
IGBT N-Ch 1200V 100A XPT GenX3 PLUS247

IGBT N-Ch 1200V 100A XPT GenX3 PLUS247

Supplier's Site

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYX100N120C3 279-IXYX100N120C3 8080225 8080225P
Product Name 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs IGBT Transistor IGBTs IGBTs
VCES 1200 volts
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