The IXFH14N85X is an N-channel enhancement mode MOSFET designed for high-voltage switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case with a drain tab, weighing 6.0 g. The device has a drain-source breakdown voltage of 850 V, a continuous drain current of 7 A at 25°C, and a maximum pulsed drain current of 35 A. Its on-state resistance is 550 mΩ at 10 V gate voltage and 7 A drain current. It is avalanche rated, features a fast intrinsic diode with a forward voltage of 1.4 V, and has a thermal resistance from junction to case of 0.21 °C/W. The operating junction temperature range is -55 °C to +150 °C.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH14N85X |
| Product Name | 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
