Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH140N10P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFH140N10P is an N-channel enhancement mode power MOSFET designed for high-current switching applications, featuring a drain-source voltage rating of 100 V and a continuous drain current of 140 A at 25°C. It is packaged in a TO-247 case with a weight of 6.0 g and is avalanche rated with an unclamped inductive switching energy of 80 mJ at 25°C. The device has a maximum on-resistance of 11 mΩ at VGS = 10 V and ID = 0.5 I_D25, and a thermal resistance from junction to case of 0.21°C/W. It includes a fast intrinsic diode with reverse recovery time up to 200 ns and meets RoHS standards. The part supports operation from -55°C to 175°C junction temperature and is rated for 600 W power dissipation at 25°C.

Datasheet Summary
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The IXFH140N10P is an N-channel enhancement mode power MOSFET designed for high-current switching applications, featuring a drain-source voltage rating of 100 V and a continuous drain current of 140 A at 25°C. It is packaged in a TO-247 case with a weight of 6.0 g and is avalanche rated with an unclamped inductive switching energy of 80 mJ at 25°C. The device has a maximum on-resistance of 11 mΩ at VGS = 10 V and ID = 0.5 I_D25, and a thermal resistance from junction to case of 0.21°C/W. It includes a fast intrinsic diode with reverse recovery time up to 200 ns and meets RoHS standards. The part supports operation from -55°C to 175°C junction temperature and is rated for 600 W power dissipation at 25°C.

Suppliers

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Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH140N10P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH140N10P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH140N10P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 140A 100V 0.011ohm MOSFET Transistor
278-IXFH140N10P
N-Channel 140A 100V 0.011ohm MOSFET Transistor 278-IXFH140N10P
Power Field-Effect Transistor, 140A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Product overview: IXFH140N10P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 140A, 100V, 0.011ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 140A, 100V, 0.011ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH140N10P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 140A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Product overview: IXFH140N10P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 140A, 100V, 0.011ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 140A, 100V, 0.011ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH140N10P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH140N10P 278-IXFH140N10P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 140A 100V 0.011ohm MOSFET Transistor
Polarity N-Channel
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