The IXFA14N85XHV is an N-channel enhancement mode Power MOSFET rated for 850 V drain-source voltage and 14 A continuous drain current, designed for high-voltage switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It features a TO-263HV surface-mount package and is avalanche rated with a fast intrinsic diode. The device has a maximum on-resistance of 550 mΩ at 25°C and a gate-source voltage limit of ±30 V. Junction temperature ranges from -55°C to 150°C. The thermal resistance from junction to case is 0.27 °C/W. The device has low package inductance and meets international standard package requirements.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA14N85XHV |
| Product Name | 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
