The IXFA50N20X3 is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-263 case with a drain tab, weighing 2.5 g. The device has a drain-source breakdown voltage of 200 V, a continuous drain current of 50 A at 25°C, and a maximum drain-source on-resistance of 30 mΩ at 10 V gate voltage. It is avalanche rated with an energy rating of 400 mJ and a transient dv/dt capability of 50 V/ns. Thermal resistance from junction to case is 0.52 °C/W. The device operates from -55 °C to 150 °C junction temperature and meets RoHS standards.
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA50N20X3 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
