BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
TRANSISTOR, IGBT, 1.7KV, 200A, TO-264; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:2.6V; Power Dissipation:1.04kW; Collector Emitter Voltage Max:1.7kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
| Littelfuse, Inc. | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBK75N170 | 03AH0372 |
| Product Name | 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs | Transistor, Igbt, 1.7Kv, 200A, To-264; Continuous Collector Current Littelfuse |
| VCES | 1700 volts | |
| VCE(on) | 3.1 volts | |
| IC(max) | 200 amps |
