Littelfuse, Inc. N-channel depletion mode field effect transistors (FET) CPC3981

Depletion Mode MOSFET DevicesOur N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process which realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid-state relays for industrial and telecommunications applications. Normally closed with no power applied Low VGS(off) voltage High input impedance