- Trained on our vast library of engineering resources.

Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFH230N10T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFH230N10T - Littelfuse, Inc.
Chicago, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFH230N10T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFH230N10T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Features: International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier Advantages: Easy to Mount Space Savings High power density Applications: Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC motor drives DC Choppers High Speed Power Switching Applications

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH230N10T
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
Polarity N-Channel
V(BR)DSS 100 volts
IDSS 230000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

N-Channel Depletion-Mode MOSFETs Series - CPC3909 - Littelfuse, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Depletion
Package Type SOT89; SOT223; SOT-89, SOT-223
View Details
600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations - FDM47-06KC5 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 47000 milliamps
View Details
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN100N50P - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 500 volts
IDSS 90000 milliamps
View Details
2 suppliers
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFH170N25X3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 250 volts
IDSS 170000 milliamps
View Details
2 suppliers