The CPC3720 is an N-channel depletion-mode FET designed for high-power applications such as ignition modules, solid state relays, and telecommunications equipment. It is packaged in an SOT-89 case and features a maximum drain-source breakdown voltage of 350 V, a maximum on-state drain-source resistance of 22 Ω at 25°C, and a gate-source off voltage range of -1.6 V to -3.9 V. The device supports a pulsed drain current of 600 mA and operates within a junction temperature range of -55°C to +125°C. It has a total package dissipation of 1.4 W and a junction-to-ambient thermal impedance of 90 °C/W. The part meets the moisture sensitivity level MSL 1 and is ESD sensitive per JESD-625.
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | CPC3720 |
| Product Name | N-channel depletion mode field effect transistors (FET) |
| Polarity | N-Channel |
