The IXBP5N160G is a high-voltage BIMOSFET IGBT for switched-mode power supplies and lamp ballasts, housed in a TO-220 AB package measuring 12.7-13.97 mm in height and 14.73-16.00 mm in width. It supports a maximum collector-emitter voltage of 1600 V and a continuous collector current of 5.7 A at 25°C. Power dissipation is 68 W at 25°C, with a gate-emitter voltage rating of ±20 V. The saturation voltage is 4.9 V at 3 A and 25°C, switching off in 70 ns and turning on with a 140 ns delay. Thermal resistance from junction to case is 1.85 K/W. The epoxy casing meets UL 94 V-0, and the device operates from -55°C to 150°C. Reverse conduction capability is provided with a forward voltage of 6 V at 3 A.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBP5N160G |
| Product Name | 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 1600 volts |
