The IXFH22N60X2A is an N-channel enhancement mode power MOSFET designed for switch-mode, resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case with a weight of 6 g and rated for a drain-source voltage of 600 V and a continuous drain current of 22 A at 25°C. The device has a maximum on-resistance of 145 mΩ at V GS = 10 V and I D = 11 A, and is avalanche rated with a single-pulse energy rating of 1 J. It meets AEC-Q101 qualification standards. The package features low inductance and is designed for easy mounting and space savings.
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH22N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body diodes HiPerFETs of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency. International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH22N60X2A |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - Automotive Qualified - Series: Ultra Junction X2-Class - IXFH22N60X2A |
| Package Type | TO-247; TO-247 |
